3S-P05
Laboratory SiH4-CVD system for deposition of Si films on LIB cathode materials
This is a CVD experimental system—featuring proprietary Si film-deposition technology—that generates monosilane gas on a small scale and introduces it into a thermal or plasma CVD unit to deposit amorphous Si films at low temperatures onto substrates or materials such as LIB anodes.
It eliminates the need for the costly and difficult infrastructure associated with monosilane gas cylinders and ensures high safety by maintaining a consistent reduced-pressure environment. It is suitable for the R&D of next-generation LIB anode materials (Si film/porous carbon materials).
This is a CVD experimental system—featuring proprietary Si film-deposition technology—that generates monosilane gas on a small scale and introduces it into a thermal or plasma CVD unit to deposit amorphous Si films at low temperatures onto substrates or materials such as LIB anodes.
It eliminates the need for the costly and difficult infrastructure associated with monosilane gas cylinders and ensures high safety by maintaining a consistent reduced-pressure environment. It is suitable for the R&D of next-generation LIB anode materials (Si film/porous carbon materials).
Requested depostion experiments are also possbile, please contact us.
*The following information is provided to enable inquiries to exhibitors.
Unauthorized use and reproduction for any other purpose is prohibited.
Apply for seminar
